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trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile

load switch battery applications si7445dp vishay siliconix new product document number: 71626 s-03835?rev. a, 28-may-01 www.vishay.com 1 p-channel 20-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.0077 @ v gs = ?4.5 v ?19 ?20 0.0094 @ v gs = ?2.5 v ?17 0.0125 @ v gs = ?1.8 v ?15 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view s g d p-channel mosfet

parameter symbol 10 secs steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 8 v a t a = 25 c ?19 ?12 continuous drain current (t j = 150 c) a t a = 70 c i d ?15 ?9 pulsed drain current i dm ?50 a continuous source current (diode conduction) a i s ?4.3 ?1.6 t a = 25 c 5.4 1.9 maximum power dissipation a t a = 70 c p d 3.4 1.2 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 18 23 maximum junction-to-ambient a steady state r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 1.0 1.3 c/w notes a. surface mounted on 1? x 1? fr4 board.
si7445dp vishay siliconix new product www.vishay.com 2 document number: 71626 s-03835 ? rev. a, 28-may-01

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 16 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 70 c ? 10 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v ? 40 a v gs = ? 4.5 v, i d = ? 19 a 0.0064 0.0077 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 17 a 0.0078 0.0094 ds(on) v gs = ? 1.8 v, i d = ? 10 a 0.0105 0.0125 forward transconductance a g fs v ds = ? 15 v, i d = ? 19 a 75 s diode forward voltage a v sd i s = ? 4.3 a, v gs = 0 v ? 0.65 ? 1.1 v dynamic b total gate charge q g 92 140 gate-source charge q gs v ds = ? 15 v, v gs = ? 5 v, i d = ? 19 a 19 nc gate-drain charge q gd 16.5 gate-resistance r g 2 turn-on delay time t d(on) 40 60 rise time t r v dd = ? 15 v, r l = 15 45 65 turn-off delay time t d(off) v dd = ? 15 v, r l = 15 i d ? 1 a, v gen = ? 4.5 v, r g = 6 400 600 ns fall time t f 190 290 source-drain reverse recovery time t rr i f = ? 4.3 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 0246810 v gs = 5 thru 2 v 25 c t c = 125 c ? 55 c 1.5 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d
si7445dp vishay siliconix new product document number: 71626 s-03835 ? rev. a, 28-may-01 www.vishay.com 3

v sd ? source-to-drain voltage (v) 0.000 0.006 0.012 0.018 0.024 0.030 02468 ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 0 1 2 3 4 5 0 20406080100 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 3000 6000 9000 12000 15000 048121620 c rss c oss c iss v ds = 15 v i d = 19 a v gs = 4.5 v i d = 19 a v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) t j = 25 c i d = 19 a 50 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? source current (a) i s v gs = 4.5 v v gs = 2.5 v t j = 150 c
si7445dp vishay siliconix new product www.vishay.com 4 document number: 71626 s-03835 ? rev. a, 28-may-01

10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.001 0 1 160 200 40 10 0.01 single pulse power, juncion-t o-ambient time (sec) 120 80 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c)

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